APMC Workshops (WS) Program

WS1-R3
WS1-R4
WS1-R5
WS1-R6
WS1-R7
WS1-R8
WS1-R9
WS2-R3
WS2-R4

WS1-R3

AI-Driven Microwave Design: From Fundamentals to EM/Circuit Applications

Room: 403
Time: 9:30 - 12:30
Chair: Masaru Sato (Fujitsu Ltd., Japan)
Kazuya Yamamoto (Mitsubishi Electric Corp., Japan)
Organizer: Masaru Sato (Fujitsu Ltd., Japan)
Kazuya Yamamoto (Mitsubishi Electric Corp., Japan)

Abstract

Recent advances in artificial intelligence and machine learning (AI/ML) are rapidly transforming the way microwave, RF, and mmWave systems are conceived, designed, and optimized. Traditionally, high-performance RF and microwave components and circuits have relied on the deep expertise of human designers, iterative EM/circuit simulations, and extensive prototyping.

This half-day workshop aims to provide a coherent and practical overview of AI-driven microwave design, spanning fundamental concepts, topology optimization and inverse design, EM/circuit co-design, RFIC design, linearization, and state-of-the-art applications in power amplifiers and integrated circuits. The speakers will address both theoretical underpinnings and hands-on methodologies, illustrating how AI/ML techniques can drastically reduce design cycles, enable novel device topologies, and achieve performance that is difficult or impossible to obtain using conventional approaches alone.

Time Table

9:30	Topology Optimization and Inverse Design of Optical and Microwave Devices Yasuhide Tsuji (Muroran Institute of Technology, Japan)
9:50	Rapid Realization of Efficient and Wideband Wireless Communication Power Amplifiers Using AI/ML-Based Design Christian Fager (Chalmers University of Technology, Sweden), Han Zhou (Tampere University, Finland)
10:25	Break
10:40	AI-Assisted RFIC Design - State-of-the-Art and Challenges Hua Wang (ETH Zurich, Switzerland)
11:15	Machine Learning-Based Digital Predistortion Linearization for High-Efficiency RF Power Amplifiers Pere L. Gilaber (Universitat Politècnica de Catalunya, Spain)
11:50	Inverse Design of Nonintuitive Multilayered RF and mmWave Integrated Circuits Vinay Chenna (Stanford University, USA)

WS1-R4

Next-Generation Microwave Technologies for Scalable Quantum Computing

Room: 404
Time: 9:30 - 12:30
Organizer: Hiroyuki Kayano (AIST G-QuAT, Japan)

Abstract

Quantum computing has moved from theoretical exploration to practical applications, with superconducting and spin qubits driving the system development race. At the heart of these architectures lie microwave technology, serving as a crucial interface for manipulating, reading out, and entangling qubits. This workshop aims to bring together microwave engineers and quantum physicists to address the technical challenges of hardware scalability.

Time Table

9:30	The Road to a Superconducting FTQC System Masahiro Horibe (AIST G-QuAT, Japan)
10:15	Operating Superconducting Quantum Processors at Scale: Autonomous Bring-Up and Calibration Chii Dong Chen (Academia Sinica, Taiwan)
11:00	Cryo-CMOS Controller System for Superconducting Qubits Jaeyoon Shim (POSTECH, Korea)
11:45	Superconducting Quantum Computers: Co-simulation and Co-integration in Kilo-Qubit Era Daryoush Shiri (Keysight Technologies, Singapore)

WS1-R5

Millimeter-Wave/THz Systems, Circuits, and Integration Technologies for Next-Generation Radar, Sensing, and Communications

Room: 405
Time: 9:30 - 17:00
Chair: Ichiro Somada (Mitsubishi Electric Corp., Japan)
Organizer: Kyoya Takano (Tokyo University of Science, Japan)

Time Table

9:30	Experimental Verification of High-Resolution Sensing Scheme using Sub-terahertz Wave Akinori Taira (Mitsubishi Electric Corp., Japan)
10:30	Terahertz Sensing and Communications Technology in an All-Silicon Photonics Platform Linxi Chen (Adelaide University, Australia)
11:30	Design Method for Realizing a 300 GHz band One-Dimensional Antenna Array Using CMOS-RFIC Ichiro Somada (Mitsubishi Electric Corp., Japan)
12:30	Break
14:00	Phased Array Antenna Modules with SiGe RFICs for Millimeter-wave Applications Yo Yamaguchi (Fujikura Ltd., Japan)
15:00	Emerging Chip Scale Terahertz Systems for Sensing, Metrology and Security Applications Ruonan Han (MIT, USA)
16:00	THz Electronics for Sensing and Communication Applications Chun-Hsing Li (National Taiwan University, Taiwan)

WS1-R6

Advanced GaN RF Technologies for Applications in Emerging Frequency Bands: FR3, mmWave, and Sub-THz

Room: 409
Time: 9:30 - 16:50
Chair: Ko-Tao Lee (Qorvo, USA)
Tian-Li Wu (National Yang Ming Chiao Tung University, Taiwan)
Organizer: Ko-Tao Lee (Qorvo, USA)
Tian-Li Wu (National Yang Ming Chiao Tung University, Taiwan)

Abstract

Gallium nitride (GaN) technologies are emerging as a key enabler for non-terrestrial networks (NTN), advanced sensing, and future 6G systems operating from FR3 through sub-terahertz frequencies. This workshop brings together leading experts from industry and academia to present recent advances in GaN RF devices, circuits, and system integration targeting E-band, W-band, and beyond.

Topics span the full technology stack, from device physics and reliability to MMIC design and heterogeneous integration. Presentations will address reliability-performance trade-offs in RF GaN technologies, aggressive transistor scaling, electric-field engineering, and emerging material platforms for enhanced high-frequency performance. Recent progress in GaN-on-Si technologies will be discussed, highlighting opportunities for cost-effective deployment in FR3, mmWave, and sub-THz applications.

The workshop will also showcase advances in W-band power amplifiers, high-power GaN MMICs for satellite and NTN communications, and innovative 3D hybrid-bonding approaches that enable compact, high-density RF front ends. Together, these developments illustrate how GaN technology is extending its performance frontier while addressing challenges in scalability, efficiency, reliability, and integration. Attendees will gain a comprehensive perspective on the innovations shaping future high-frequency communication and sensing systems.

Time Table

9:30	GaN-on-Si for the 6G Era: Scaling RF Power from FR3 to Sub-THz Nadine Collaert (IMEC, Belgium)
10:10	FR3 to sub-THz: What are the opportunities for GaN-on-Si? Geok Ing Ng (National Semiconductor Translation and Innovation Centre for Gallium Nitride, Singapore)
10:50	Break
11:00	Challenges in W-band GaN HEMT Power Amplifier MMIC Design Shinji Hara (Nagoya University, Japan)
11:40	Reliability vs. Design Trade-offs of RF GaN-on-Si MIS-HEMTs for Power Amplifiers Tian-Li Wu (National Yang Ming Chiao Tung University, Taiwan)
12:20	Break
14:00	Development of Nitrogen-polar GaN HEMTs for RF Amplifiers Kozo Makiyama (Sumitomo Electric Industries, Japan)
14:40	Exploratory GaN Technologies for E-band, W-band and Beyond Ko-Tao Lee (Qorvo, USA)
15:20	Break
15:30	Mitsubishi Electric's GaN Technology for Millimeter-Wave and Sub-THz Keigo Nakatani (Mitsubishi Electric Corp., Japan)
16:10	GaN mmWave Design via 3D Hybrid Bonding: Methodology and Implementation Chin-Chi Chang (3DMMIC, Taiwan)

WS1-R7

Microwave heating applications for decarbonization of chemical industries

Room: 410
Time: 9:30 - 17:00
Chair: Shuntaro Tsubaki (Kyushu University, Japan)
Organizer: Shuntaro Tsubaki (Kyushu University, Japan)
Naoki Shinohara (Kyoto University, Japan)

Abstract

Industrial electrification is a key technological challenge for achieving carbon-neutral manufacturing, particularly in energy-intensive chemical processes. From a microwave engineering perspective, microwave chemical processing provides a unique platform in which electrical power is directly converted into chemical reaction energy through controlled electromagnetic field–matter interactions. This approach enables a paradigm shift from conventional fossil fuel-based thermal processing toward electricity-driven reaction systems compatible with renewable energy sources.

Microwave irradiation enables selective and localized energy deposition at solid–liquid, solid–gas, solid–solid, and gas–liquid interfaces, where electromagnetic loss mechanisms dominate. By engineering electromagnetic parameters such as frequency, power density, phase, polarization, and spatial field distribution, chemical reactions can be accelerated beyond the limits of heat-transfer-dominated processes.

This workshop, organized by JEMEA, JSPS R074 Committee, and IEEE MTT-S Sustainable Microwave Technology Committee, focuses on emerging microwave chemical processes from the viewpoint of microwave engineering and applied electromagnetics. Topics include microwave heating applications in various fields of the chemical industry. Particular emphasis is placed on understanding the physical origins of microwave-induced rate enhancement through in situ and operando diagnostics combined with multiphysics simulations. The symposium also covers advances in solid-state microwave sources, power electronics, and real-time control systems. Challenges and opportunities for industrial implementation will be discussed.

Time Table

9:30	Opening remark Shuntaro Tsubaki (Kyushu University, Japan)
9:35	Solid-state generators as enablers of the next-generation microwave energy applications Satoshi Horikoshi (Sophia University, Japan)
10:15	Microwave-Assisted Catalysis for Energy and Environmental Processes Hisahiro Einaga (Kyushu University, Japan)
10:55	Break
11:05	Novel Microwave Heating System for Sustainable Future Tomohiko Mitani, Naoki Shinohara (Kyoto University, Japan)
11:45	Computational Modelling as a Facilitator for Microwave Heating Applications Malgorzata Celuch (IEEE MTT-S, QWED, Poland)
12:25	Break
14:00	Design of a Microwave Heating Furnace with Material Optimization via Parametric Analysis Keiichiro Kashimura (Chubu University, Japan)
14:40	Energy analysis and social considerations for microwave-based chemical recycling of plastics Andrew Chapman (Kyushu University, Japan)
15:20	Break
15:30	Microwave Process Scale-Up in Mining and Metallurgical Industries: Case Studies Kazuya Kono (Microwave Chemical Co., Ltd., Japan)
16:10	Microwave for industrial applications Gabriela Duran Jimenez (University of Nottingham, United Kingdom)
16:50	Closing remarks Naoki Shinohara (Kyoto University, Japan)

WS1-R8

Advanced Nonlinear Modeling and Large-Signal Characterization of III-V RF Devices

Room: 411
Time: 9:30 - 16:55
Chair: Osman Ceylan (Maury Microwave, USA)
Seiya Takashima (Sumitomo Electric Device Innovations, Inc., Japan)
Organizer: Osman Ceylan (Maury Microwave, USA)
Seiya Takashima (Sumitomo Electric Device Innovations, Inc., Japan)

Abstract

Wideband gap III-V technologies are the backbone of modern high-power RF systems, from base stations to advanced radars. However, as modern architectures demand, achieving the required balance of high efficiency, suitable linearity, and wide bandwidth operation requires more than just standard design. It demands reliable nonlinear device models built on precision and accurate measurement data.

Therefore, advanced and accurate nonlinear modeling of RF diodes and transistors is needed to design improved high-performance circuits, modules, and complete systems. Trapping effects, memory effects, nonlinear parasitic components, scaling requirement, and thermal issues must be considered to extract a reliable device model.

Modern measurement systems enable well-controlled and accurate measurements to collect consistent data in short time. These systems allow multiple measurements without large modifications, such as double RF&DC pulsing, non-50 ohm measurements using modulated signals, vector load-pull at sub-THz frequencies, etc. Then, the innovative device models and modeling tools finalize the process to release a model that will be admired by design engineers.

In this workshop, experienced speakers from industry and academia will share their experiences and insights about III-V device characterization and advanced modeling. Fundamentals of large signal measurements, vector calibration for large signal measurements, calibration verification techniques, modern modeling methods, device size scaling issues, and measurement techniques to analyze nonlinear behaviors, such as trapping, will be covered. In addition to large signal topics, noise modeling of III-V devices will be discussed. The workshop will conclude with a networking session, offering a casual atmosphere to discuss challenges and share ideas about the topics.

Time Table

9:30	Welcome and Greetings
9:35	Fundamentals of Large Signal Characterization Osman Ceylan (Maury Microwave, USA)
9:50	From Calibration to Confidence: Practical Large-Signal III-V Device Characterization for Model-Ready Data Elanchezhian Veeramani (Global Foundries, USA)
10:25	Beyond Calibration: DUT-Plane Verification and Device-State Integrity in On-Wafer Load-Pull Rana ElKashlan (IMEC, Belgium)
11:00	Measurement Uncertainty of Passive Source/Load-Pull Ryoko Kishikawa (AIST & Hiroshima University, Japan)
11:35	Probe Tip Calibration, Validation and Measurement Techniques for Sub-THz Wafer Tests Choon Beng Sia (Formfactor Inc., USA)
12:10	Measurement, Characterization, and Modulated Signal Quality Evaluation of Broadband mmWave/THz Circuits /System Seyyid M. Dilek (IHP, Germany)
12:45	Noise Parameter Extraction and Noise Modeling for III-V Devices Lida Kouhalvandi (Dogus University, Turkey)
13:00	Break
14:00	Modeling Approach for Large Power GaN Packaged Devices: Idealism and Realism Seiya Takashima (Sumitomo Electric Device Innovations, Inc., Japan)
14:35	Compact Modeling of GaN Transistors: Myths, Misconceptions, and Practical Realities Antonio Raffo, Valeria Vadalà (University of Ferrara, Italy)
15:10	Large-Signal Modeling Techniques for GaN Power Amplifiers Yutaro Yamaguchi (Mitsubishi Electric Corp., Japan)
15:45	Physics-based GaN device modeling using T-CAD Koji Yamanaka (Kanazawa Institute of Technology, Japan), Toshiyuki Oishi (Saga University, Japan)
16:20	Evolution of Large-Signal Models and Advanced PDK Features Jia-Shyan Wu (WIN, Taiwan)

WS1-R9

On-Wafer and Material Characterization Measurements for 6G Communications and Advanced Semiconductor Applications

Room: 412
Time: 9:30 - 16:40
Chair: Gia Ngoc Phung (Physikalisch-Technische Bundesanstalt, Germany)
Andrej Rumiantsev (MPI Corporation, Taiwan)
Organizer: Gia Ngoc Phung (Physikalisch-Technische Bundesanstalt, Germany)
Andrej Rumiantsev (MPI Corporation, Taiwan)

Abstract

As 6G communication systems extend into ever higher frequency bands, the need for accurate, traceable, and reliable RF metrology becomes increasingly critical. This full-day workshop brings together experts from national metrology institutes, industry, academia, and instrumentation manufacturers to present the latest advances in measurement and characterization techniques enabling next-generation 6G technologies.

The program features ten presentations covering two core areas: on-wafer S-parameter measurements and dielectric material characterization. Topics include traceability and uncertainty evaluation, broadband on-wafer techniques up to 250 GHz, and multiport and differential characterization methods. Advances in material metrology will address complex permittivity determination using THz spectroscopy, ellipsometry, and Fabry–Perot resonator approaches.

Emerging concepts such as AI-driven nanorobotic probe stations and quantum sensing based on Rydberg atom technologies will also be explored. By combining perspectives from fundamental metrology research and industrial application, the workshop aims to strengthen measurement capabilities supporting future high-frequency communication and quantum systems.

Time Table

9:30	Welcome workshop attendees
9:35	From Calibration to Confidence: Practical Methods for Trustworthy Wafer-Level mmWave Measurements Andrej Rumiantsev (MPI Corporation, Taiwan)
10:05	Simplifying Broadband VNA Measurements with Single-Sweep 250 GHz Frequency Extenders Ziad Hatab (Keysight Technologies, USA)
10:35	Transferring on-wafer traceability to industrial lumped-element calibrations Uwe Arz, Gia Ngoc Phung (Physikalisch-Technische Bundesanstalt, Germany)
11:05	On-wafer measurement leakage and the effects on derived parameters Jon Martens (Anritsu, Japan)
11:35	Recent progresses in on-wafer measurement with RF signal detection technique Ryo Sakamaki (AIST, Japan)
12:05 - 14:00	Break
14:00	Autonomous Millimeter-Wave On-Wafer Probe Station using Nanorobotics, AI, and Machine Vision Kamel Haddadi (University of Lille, France)
14:30	Material Characterization for Millimeter-Wave Applications in Wireless Communication and High-Speed Digital Technologies Yoshiyuki Yanagimoto (EM Labs, Japan)
15:00	Resonator-based microwave and mmWave measurements of materials: advances and physical insights Malgorzata Celuch (QWED, Poland)
15:30	Advanced THz Spectroscopy and Ellipsometry: Expanding from Terahertz to Microwave Regimes Makoto Nakajima (The Osaka University, Japan)
16:00	Quantum concepts for electrometry and on-wafer metrology using Rydberg atoms Bruno Eckmann (METAS, Switzerland)
16:30	Summary and open discussion of the workshop

WS2-R3

Global Research and Collaboration for mm/THz Wave Wireless Technologies

Room: 403
Time: 14:00 - 17:00
Chair: Ryo Sakamaki (National Institute of Advanced Industrial Science and Technology, Japan)
Yoshiki Sugimoto (Nagoya Institute of Technology, Japan)
Organizer: Ryo Sakamaki (National Institute of Advanced Industrial Science and Technology, Japan)
Yoshiki Sugimoto (Nagoya Institute of Technology, Japan)

Abstract

In recent years, significant advancements have been made in various fields related to ultra-high-speed wireless communications for leveraging the mm/THz wave band, including integrated circuit, antennas, microwave propagation, packaging technologies, and system-level applications. These developments are driven by the increasing demand for 6G and beyond wireless systems that require extremely wide bandwidths, high data rates, and low latency. The mm/THz frequency range has therefore emerged as a promising frontier for future wireless communications, sensing, and imaging.

Despite rapid progress, many critical research challenges in the mm/THz band cannot be effectively addressed within a single research field, including co-design of circuits and antennas, and integration of packaging with system performance. These challenges highlight the urgent need for interdisciplinary communication and collaboration.

This workshop aims to foster such cross-disciplinary interactions by providing a forum for researchers from different technical backgrounds to share recent results, discuss open problems, and explore new collaborative research directions. The workshop will feature invited talks from the Global Research Initiative on Wireless Terahertz (GROW-THz) project, which brings together organizations from Japan, EU, and the USA. By bringing together experts from diverse fields covering devices and circuits, antennas and propagation, packaging, and system demonstrations, this workshop seeks to stimulate new collaborations and accelerate the realization of innovative mm/THz wave wireless technologies.

Time Table

14:00	300 GHz – Limits and Opportunities for Silicon-Based Transceivers Aarno Pärssinen (University of Oulu, Finland)
14:35	CMOS Chips Surfing on Millimeter Waves for Radar Davide Guermandi (imec, Belgium)
15:10	Challenges and Innovations of Beam-Scanning Sub-Terahertz Antennas for Future XG Wireless Systems Kunio Sakakibara (Nagoya Institute of Technology, Japan)
15:45	Break
15:50	Heterogeneous Integration: Interconnects and Transmission Lines Michael Ernst Gadringer, Arash Arsanjani, Wolfgang Bösch, Lukas Ebner, Arezoo Abdi (Graz University of Technology, Austria)
16:25	Design Trade-Offs and Practical Challenges in a 300-GHz CMOS 8×8 Phased-Array Transceiver Minoru Fujishima (Hiroshima University, Japan)

Sponsorship

This workshop is supported by JST “ASPIRE Program”, Japan (Grant Number JPMJAP2414).

WS2-R4

Technologies, Circuits, and Challenges Defining the Transition to 6G-FR3

Room: 404
Time: 14:00 - 17:00
Chair: Florinel Balteanu (Skyworks Solutions, USA)
Organizer: Florinel Balteanu (Skyworks Solutions, USA)

Abstract

The transition from 5G to 6G marks a substantial advancement in wireless communication, with anticipated very high data rates, sub-microsecond latency, and the integration of pervasive artificial intelligence (AI) and extensive sensing capabilities. Realizing these objectives requires a comprehensive reassessment of core semiconductor technologies and integrated circuit design, as well as addressing significant system-level challenges. This workshop provides a valuable forum to examine the interconnected technological developments required to enable the transition from 5G to 6G-FR3. The workshop offers an overview of current 5G RF Front End Module circuits and technologies and examines the challenges associated with the transition to 6G-FR3.

Time Table

14:00	RF Engineered Substrates for the Next Generation of Wireless Connectivity Luis Andia (Soitec, Singapore)
14:40	Acoustic Filters for 5G and Transition to 6G-FR3 Rei Goto (Skyworks, Japan)
15:20	Advanced High-Efficiency GaN PA Module for FR3 Massive MIMO Base Stations Shuichi Sakata, Kento Saiki (Mitsubishi Electric Corp., Japan)
16:00	Emerging Technologies for 6G FR3 Florinel Balteanu (Skyworks Solutions, USA)
16:40	Questions and Discussions